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Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm

Chaqmaqchee, Faten Adel and Balkan, Naci (2014) 'Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm.' Nanoscale Research Letters, 9 (1). p. 37. ISSN 1556-276X

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Abstract

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical-cavity semiconductor optical amplifier (THH-VCSOA) is a bidirectional light-emitting and light-absorbing heterojunction device. The device contains 11 Ga0.35In0.65 N0.02As0.08/GaAs MQWs in its intrinsic active region which is enclosed between six pairs of AlAs/GaAs top distributed Bragg reflectors (DBRs) and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The THH-VCSOA is fabricated using a four-contact configuration. The wavelength conversion with amplification is achieved by the appropriate biasing of the absorption and emission regions within the device. Absorption and emission regions may be reversed by changing the polarity of the applied voltage. Emission wavelength is about 1,300 nm and a maximum gain at this wavelength is around 5 dB at T = 300 K.

Item Type: Article
Uncontrolled Keywords: THH-VCSOA; Bidirectional; GaInNAs; Amplification
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 02 Dec 2014 16:13
Last Modified: 02 Dec 2014 16:13
URI: http://repository.essex.ac.uk/id/eprint/11950

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