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Dilute Nitride Resonant Cavity Enhanced Photodetector with Internal Gain for the λ∼1.3 μm Optical Communications Window

Balkan, Naci and Erol, A and Sarcan, F and Al-Ghuraibawi, Leena F F and Nordin, Mohammad S B (2015) 'Dilute Nitride Resonant Cavity Enhanced Photodetector with Internal Gain for the λ∼1.3 μm Optical Communications Window.' Superlattices and Microstructures, 86. pp. 467-471. ISSN 0749-6036

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Abstract

We report on a novel dilute nitride-based resonant cavity enhanced photodetector (RCEPD) operating at 1.286μm. The RCEPD was fabricated using 21 pairs top and 24 pairs bottom GaAs/AlGaAs distributed Bragg reflectors for mirrors and 7nm thick nine GaAs/Ga0.65In0.35N0.02 As0.98 quantum wells as the absorption region. For a 15m diameter window, the photocurrent at 1286nm is 27 μA and 42 μA, at V=0 and 1V respectively, whereas the dark current is as low as 1.7nA at 1V. At the operating wavelength, an excellent wavelength selectivity with a full width at half maximum (FWHM) of 5 nm, and a high quantum efficiency of 43% are demonstrated. The device exhibits significant internal gain at very small reverse bias voltages of V ⩾2V with an overall quantum efficiency of 67%. These are the best ever recorded values for a dilute nitride RCEPD.

Item Type: Article
Uncontrolled Keywords: RCEPD; Photodetector; DBR; Resonance Cavity
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 13 Jul 2015 14:53
Last Modified: 30 Oct 2015 10:44
URI: http://repository.essex.ac.uk/id/eprint/14305

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