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Semiconductor device design using the BiMADS algorithm

Stracquadanio, G and Romano, V and Nicosia, G (2013) 'Semiconductor device design using the BiMADS algorithm.' Journal of Computational Physics, 242. 304 - 320. ISSN 0021-9991

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Abstract

Designing high-performance semiconductor devices is a complex optimization problem, which is characterized by multiple and, often, conflicting objectives. In this research work, we introduce a multi-objective optimization design approach based on the Bi-Objective Mesh Adaptive Direct Search (BiMADS) algorithm. First, we assess the performance of the algorithm on the design of a n + - n - n + silicon diode using a standard drift-diffusion model, showing that BiMADS is able to find the best solutions and to outperform the state-of-the-art algorithms. Successively, we tackle the design of MESFET and MOSFET devices, using a Maximum Entropy Principle (MEP) model; BiMADS is able to locate new designs that minimize the size of the device and provide an increased output current. Moreover, it is proved that BiMADS is able to locate promising solutions with a tight budget of objective function evaluations, which makes it suitable for large-scale industrial applications. © 2013 Elsevier Inc.

Item Type: Article
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Giovanni Stracquadanio
Date Deposited: 07 Feb 2017 12:36
Last Modified: 24 Apr 2019 10:15
URI: http://repository.essex.ac.uk/id/eprint/18698

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