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Multi-objective optimization of doping profile in semiconductor design GECCO track: Real world applications

Stracquadanio, G and Drago, C and Romano, V and Nicosia, G (2010) Multi-objective optimization of doping profile in semiconductor design GECCO track: Real world applications. In: UNSPECIFIED, ? - ?.

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Abstract

A crucial task in designing semiconductor devices is to provide a doping profile that assures specific electrical properties. This research work is focused in redesigning doping profiles of semiconductor devices in order to obtain an increased output current; however, large doping levels can degenerate the devices and hence a trade-off between doping profile deviation and output current should be found. The doping profile optimization in semiconductor has been tackled as a multi-objective optimization problem using the Nondominated Sorting Genetic Algorithm (NSGA-II). We focus on silicon diodes and MOSFET devices; firstly, we redesign the doping profile of diodes in order to obtain a trade-off between doping profile deviation and output current. Secondly, we find a trade-off between current and temperature for a MOSFET device. The experimental results confirm the effectiveness of the proposed approach to face this class of problems in electronic design automation. Copyright 2010 ACM.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published proceedings: Proceedings of the 12th Annual Genetic and Evolutionary Computation Conference, GECCO '10
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Giovanni Stracquadanio
Date Deposited: 13 Feb 2017 14:12
Last Modified: 30 Jan 2019 16:16
URI: http://repository.essex.ac.uk/id/eprint/18712

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