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Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: Blue shift versus red shift

Balkan, N and Mazzucato, S and Erol, A and Hepburn, CJ and Potter, RJ and Boland-Thoms, A and Vickers, AJ and Chalker, PR and Joyce, TB and Bullough, TJ (2004) Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: Blue shift versus red shift. In: UNSPECIFIED, ? - ?.

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Abstract

An investigation is presented of thermal annealing effects on spectral photoconductivity and photoluminescence in sequentially grown GaInNAs/GaAs and GaInAs/GaAs quantum well structures. Experiments have been carded out at temperatures between 30 K and 300 K. The results indicate that thermal annealing improves the optical quality of GaInNAs, but may cause either a blue shift, as commonly observed by other groups, or a red shift depending on the growth technique. The anneal-induced blue-shift behaviour can be explained in terms of two competing mechanisms involving the redistribution of nearest-neighbour configuration and the change of quantum well profile. The red shift is explained in terms of hydrogen-induced chemical effects. © IEE, 2004.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Published proceedings: IEE Proceedings: Optoelectronics
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 07 Mar 2017 11:09
Last Modified: 30 Jan 2019 16:15
URI: http://repository.essex.ac.uk/id/eprint/19248

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