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Back-gated metal-semiconductor-metal photodetector

Vickers, AJ and Mashayekhi, HR (1998) Back-gated metal-semiconductor-metal photodetector. In: UNSPECIFIED, ? - ?.

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Abstract

In this paper we outline work we have recently completed on the novel high speed photodetector which has come to be known as the 'back-gated metal-semiconductor-metal' photodetector or BG-MSM for short. This device was first realized by E. Greger et. al. and us. Recent theoretical work by Hurd et. al. provided a sound basis by which to test the device against a model. The work presented here clearly indicates that the main conclusion of Hurd et. al. is sound. That conclusion was that the main response speed gain obtained by the back-gating is obtained by simply earthing the back contact. As well as this confirmation we have found strong dependence of the peak height of the response on the back gating voltage and a very strong position dependence of the excitation spot on the response particularly at low applied fields. We conclude that the back gating is an advantage over the conventional metal-semiconductor- metal photodetector and needs to be studied more extensively both theoretically and experimentally using devices capable of operation at above 100 GHz. ©2003 Copyright SPIE - The International Society for Optical Engineering.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published proceedings: Proceedings of SPIE - The International Society for Optical Engineering
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 27 Jul 2017 09:26
Last Modified: 17 Aug 2017 17:18
URI: http://repository.essex.ac.uk/id/eprint/19265

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