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Transient photoconductivity in GaInAs/InP MQW

Vickers, AJ and Kapetanakis, L (1995) 'Transient photoconductivity in GaInAs/InP MQW.' Semiconductor Science and Technology, 10 (6). 829 - 834. ISSN 0268-1242

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Abstract

Transient photoconductivity in nominally undoped (n-type background doping) Ga0.47In0.53As/InP multiquantum well heterostructures is reported. The observed responses exhibited an initial fast decay followed by a much slower subsequent decay. The slow decay was consistent with a kinetic radiative recombination model which included free carriers, excitons and photon recycling. A model describing the fast initial decay is presented in terms of fast barrier radiative recombination. A comparison between the experimental results and the model shows good agreement.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 26 Jul 2017 14:19
Last Modified: 30 Jan 2019 16:15
URI: http://repository.essex.ac.uk/id/eprint/19274

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