Vickers, AJ and Kapetanakis, L (1995) Transient photoconductivity in GaInAs/InP MQW. Semiconductor Science and Technology, 10 (6). pp. 829-834. DOI https://doi.org/10.1088/0268-1242/10/6/014
Vickers, AJ and Kapetanakis, L (1995) Transient photoconductivity in GaInAs/InP MQW. Semiconductor Science and Technology, 10 (6). pp. 829-834. DOI https://doi.org/10.1088/0268-1242/10/6/014
Vickers, AJ and Kapetanakis, L (1995) Transient photoconductivity in GaInAs/InP MQW. Semiconductor Science and Technology, 10 (6). pp. 829-834. DOI https://doi.org/10.1088/0268-1242/10/6/014
Abstract
Transient photoconductivity in nominally undoped (n-type background doping) Ga0.47In0.53As/InP multiquantum well heterostructures is reported. The observed responses exhibited an initial fast decay followed by a much slower subsequent decay. The slow decay was consistent with a kinetic radiative recombination model which included free carriers, excitons and photon recycling. A model describing the fast initial decay is presented in terms of fast barrier radiative recombination. A comparison between the experimental results and the model shows good agreement.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science and Health Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 26 Jul 2017 14:19 |
| Last Modified: | 18 Aug 2022 11:18 |
| URI: | http://repository.essex.ac.uk/id/eprint/19274 |