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Surface potential effects in the electro-optic probing of the Hall effect in bulk GaAs

Lyons, VR and Vickers, AJ (1993) 'Surface potential effects in the electro-optic probing of the Hall effect in bulk GaAs.' Semiconductor Science and Technology, 8 (12). 2058 - 2061. ISSN 0268-1242

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Abstract

The Hall effect in bulk Si-doped GaAs (n=3.4*10-18 cm -3) has been observed using an electro-optic voltage probing(EOVP)technique, which is non-invasive and eliminates the necessity for metallic voltage probes. Essentially the Hall voltage is measured by detecting the induced birefringence created by this transverse voltage. The change in polarization of the probing beam is plotted as a function of the magnetic field which induces the Hall field. A transverse voltage is observed, without the application of a magnetic field. This >>OPEN 'background' voltage is investigated, and we believe it is due to the surface potential differences between the upper and lower surfaces.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 12 Mar 2017 19:12
Last Modified: 30 Jan 2019 16:15
URI: http://repository.essex.ac.uk/id/eprint/19278

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