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Hall mobility measurements in semi-insulating GaAs by electro-optic voltage probing

Vickers, AJ and Tsui, ESM and Robert, F and Lyons, V (1992) 'Hall mobility measurements in semi-insulating GaAs by electro-optic voltage probing.' Review of Scientific Instruments, 63 (11). 5487 - 5488. ISSN 0034-6748

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Abstract

The Hall mobility in semi-insulating GaAs has been measured by probing the Hall voltage dropped across the thickness of the sample optically. This is achieved by exploiting the linear electro-optic (Pockels) effect in the material. The method only involves two electrical contacts to the sample which gives a distinct advantage over the conventional Hall or Van der Pauw techniques. It permits, in principle, the direct measurement of the time evolution of carrier populations, a useful corollary to transient photoconductivity. It also makes possible the measurement of a Hall voltage dropped across the width of a quantum well.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 29 Jun 2017 20:19
Last Modified: 17 Aug 2017 17:18
URI: http://repository.essex.ac.uk/id/eprint/19280

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