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Energy relaxation in GaAs/AlGaAs two-dimensional structures

Straw, A and Vickers, AJ and Roberts, JS (1992) 'Energy relaxation in GaAs/AlGaAs two-dimensional structures.' Semiconductor Science and Technology, 7 (3 B). ISSN 0268-1242

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Abstract

In this paper results on energy relaxation in low carrier concentration two-dimensional structures over the lattice temperatures, T 1 , of 3 K to 150 K are presented. The power loss per carrier as a function of electron temperature, T e , was experimentally determined using the mobility-field, mobility-temperature thermometric technique. In the acoustic phonon regime, below about T 1 = 20 K, The power loss per carrier was found to be proportional to T c - T 1 . Theoretical calculations in this temperature regime predict a similar form but do not agree in magnitude. Above T 1 = 40 K the power loss per carrier was modelled using an optic phonon scattering model, which includes the effects of hot phonons, and which predicts a phonon lifetime of 11 ps ± 1 ps. Between these two regimes, for the multi-quantum well, the experimental power loss was found to be greater than the theoretical power loss. This discrepancy has been explained by invoking scattering due to optic phonon-plasmon coupling. Using the optic phonon-plasmon coupled mode energy and the scattering time as fitting parameters values of 10 meV for the energy of the coupled mode and 400 ps for the scattering time were obtained.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 26 Jul 2017 13:00
Last Modified: 17 Aug 2017 17:18
URI: http://repository.essex.ac.uk/id/eprint/19281

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