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Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells

Straw, A and Vickers, AJ and Roberts, JS (1989) Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells. In: UNSPECIFIED, ? - ?.

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Abstract

We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (Te - Tl), suggesting that the energy relaxation occurs through acoustic phonon scattering. At electron temperatures greater than 20K, the experimental results are modelled using a standard expression for polar optical phonons. This modelling yields 30meV and 31meV for the polar optical phonon energy in GaAs and InGaAs respectively. © 1989.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Published proceedings: Solid State Electronics
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 12 Mar 2017 16:17
Last Modified: 13 Mar 2019 11:15
URI: http://repository.essex.ac.uk/id/eprint/19285

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