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Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors

Kyritsis, G and Zakhleniuk, N (2017) 'Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors.' IEEE Journal of Quantum Electronics, 53 (3). ISSN 0018-9197

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Abstract

The output power and tuning performance of multi-quantum-well (MQW) and bulk InGaAsP/InP-distributed Bragg reflector (DBR) tunable laser diodes (TLDs) are investigated over a wide wavelength tuning range using physics-based PICS3D and VPI laser simulation tools within the travelling-wave formalism. The key result of our simulations is the discovery of a new effect in TLDs due to intervalence band absorption (IVBA) in passive phase and DBR sections, which limits the wavelength tuning range. The physical mechanism responsible for such a behavior is a collapse of the spectral-mode selectivity by the DBR due to large IVBA losses in the phase or/and DBR sections. We fundamentally demonstrate different roles played by the IVBA in the active and passive sections of a TLD. It is shown that the IVBA in passive sections and the carrier relaxation broadening (CRB) of the Lorentzian lineshape function in the lasers' active and passive sections play a crucial role in TLD tuning operation. The IVBA coefficient k IVBA and the intraband relaxation time τ in are the major limiting factors that define the output power variation and the achievable tuning range of the lasers. Both bulk and MQW lasers with small k IVBA demonstrate a wide wavelength tuning range above 30 nm, while for large k IVBA , the tuning range drops below 10 nm. We show that the output power variation with tuning due to the CRB parameter τ in is qualitatively different in bulk and MQW TLDs. The TLD tuning and power performance is also strongly affected by the shapes of the net gain and the cavity mirror loss spectra and their mutual positioning with respect to the lasing cavity mode during the tuning. The limiting parameters k IVBA and τin as well as gain and mirror loss spectra must be thoroughly evaluated in each TLD structure prior to the device design and optimization in order to achieve the best performance in terms of the wavelength tuning and the output power stability.

Item Type: Article
Uncontrolled Keywords: Semiconductor lasers, tunable laser diode, intervalence band absorption, Lorentzian lineshape, electron relaxation broadening, gain spectra, simulation, PICS3D, VPI
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 31 Mar 2017 13:25
Last Modified: 21 Sep 2018 18:15
URI: http://repository.essex.ac.uk/id/eprint/19418

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