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Comparison of type I and type II heterojunction unitravelling carrier photodiodes for terahertz generation

Dyson, A and Henning, ID and Adams, MJ (2008) 'Comparison of type I and type II heterojunction unitravelling carrier photodiodes for terahertz generation.' IEEE Journal on Selected Topics in Quantum Electronics, 14 (2). 277 - 283. ISSN 1077-260X

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Abstract

To assess the potential for terahertz generation, we have numerically simulated unitravelling carrier photodiodes with type I InGaAs/InP and type II GaAsSb-InP heterojunctions. The simulations give good agreement with published experimental results detailing device operation and 3 dB bandwidth. The optimization of these structures as photomixers by reducing the layer thickness of the absorber and varying the doping of the absorber and collector layers shows excellent potential for terahertz generation. © 2006 IEEE.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 05 Mar 2012 14:29
Last Modified: 17 Aug 2017 18:13
URI: http://repository.essex.ac.uk/id/eprint/2184

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