Vasileiadis, M and Alexandropoulos, D and Adams, MJ and Simos, H and Syvridis, D (2008) 'Potential of InGaAs/GaAs quantum dots for applications in vertical cavity semiconductor optical amplifiers.' IEEE Journal on Selected Topics in Quantum Electronics, 14 (4). 1180 - 1187. ISSN 1077-260X

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Abstract

The use of InGaAs/GaAs quantum dots (QDs) in vertical cavity semiconductor optical amplifiers (VCSOAs) is proposed and analyzed. The results underline the distinctive differences between practical designs for QD vertical cavity semiconductor lasers and QD-VCSOAs. By means of a QD rate-equation scheme that accounts for both homogeneous and inhomogeneous broadening and the VCSOA cavity characteristics, the effects of material properties are identified. The design routes outlined here ensure the suitability of QD-VCSOAs for high-speed applications (>100 Gb/s) that rely on the fast carrier dynamics. © 2006 IEEE.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User:	Jim Jamieson
Date Deposited:	01 Mar 2012 10:43
Last Modified:	05 Feb 2019 17:15
URI:	http://repository.essex.ac.uk/id/eprint/2188

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