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Parametric Analysis of Spin-Polarized VCSELs

Adams, Michael J and Alexandropoulos, Dimitris (2009) 'Parametric Analysis of Spin-Polarized VCSELs.' IEEE Journal of Quantum Electronics, 45 (6). pp. 744-749. ISSN 0018-9197

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Abstract

Calculations of spin-injected vertical-cavity surface-emitting lasers (VCSELs) are presented using an efficient algorithm for solution of the steady-state rate equations in the spin-flip model. The effects of spin relaxation, birefringence, electron and photon lifetimes, linewidth factor, and the magnitude and ellipticity of the pumping are investigated. After a review of published values for spin relaxation rates in semiconductors of interest for VCSELs, the dependence of spin relaxation times in GaInNAs quantum wells on N content and well width is calculated for the Elliot-Yafet process. The results, which show good agreement with experiment, are used in simulations of spin-injected GaInNAs VCSELs to determine the dependence of polarization control on well width.

Item Type: Article
Uncontrolled Keywords: Polarization; quantum theory; semiconductor lasers; semiconductor materials
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health
Faculty of Science and Health > Computer Science and Electronic Engineering, School of
SWORD Depositor: Elements
Depositing User: Elements
Date Deposited: 08 Feb 2012 13:33
Last Modified: 18 Aug 2022 10:57
URI: http://repository.essex.ac.uk/id/eprint/2196

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