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Parametric analysis of spin-polarized VCSELs

Adams, MJ and Alexandropoulos, D (2009) 'Parametric analysis of spin-polarized VCSELs.' IEEE Journal of Quantum Electronics, 45 (6). 744 - 749. ISSN 0018-9197

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Abstract

Calculations of spin-injected vertical-cavity surface-emitting lasers (VCSELs) are presented using an efficient algorithm for solution of the steady-state rate equations in the spin-flip model. The effects of spin relaxation, birefringence, electron and photon lifetimes, linewidth factor, and the magnitude and ellipticity of the pumping are investigated. After a review of published values for spin relaxation rates in semiconductors of interest for VCSELs, the dependence of spin relaxation times in GaInNAs quantum wells on N content and well width is calculated for the Elliot-Yafet process. The results, which show good agreement with experiment, are used in simulations of spin-injected GaInNAs VCSELs to determine the dependence of polarization control on well width.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 08 Feb 2012 13:33
Last Modified: 17 Aug 2017 18:13
URI: http://repository.essex.ac.uk/id/eprint/2196

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