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Dilute nitride n-i-p-i solar cells

Royall, B and Balkan, Naci (2009) 'Dilute nitride n-i-p-i solar cells.' Microelectronics Journal, 40 (3). pp. 396-398. ISSN 0026-2692

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Abstract

We propose a novel GaInNAs n-i-p-i doping superlattice to over come the problems of short minority carrier life times and low-diffusion lengths which lower the efficiency in conventional GaInNAs solar cells. A prototype structure is studied using the commercial simulation package DESSIS and the calculations of photo-generation, current density were carried out when the device is illuminated by an optical beam of a single wavelength below the band gap cut off. The I–V characteristics were simulated when both the samples were illuminated and in darkness.

Item Type: Article
Uncontrolled Keywords: n-i-p-i doping supperlattice; GaInNAs solar cell
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 06 Mar 2012 12:17
Last Modified: 06 Mar 2012 12:17
URI: http://repository.essex.ac.uk/id/eprint/2233

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