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Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

Sun, Y and Erol, A and Yılmaz, M and Arikan, M C and Ulug, B and Ulug, A and Balkan, Naci and Sopanen, Markku and Reentilä, O and Mattila, M and Fontaine, C and Arnoult, A (2008) 'Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications.' Optical and Quantum Electronics, 40 (7). pp. 467-474. ISSN 0306-8919

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Abstract

We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga1-x In x N y As1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

Item Type: Article
Uncontrolled Keywords: GaInNAs; Dilute nitrides
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 06 Mar 2012 12:15
Last Modified: 06 Mar 2012 12:15
URI: http://repository.essex.ac.uk/id/eprint/2234

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