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Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

Yılmaz, M and Sun, Y and Balkan, Naci and Ulug, B and Ulug, A and Sopanen, Markku and Reentilä, O and Mattila, M and Fontaine, C and Arnoult, A (2009) 'Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells.' Microelectronics Journal, 40 (3). pp. 406-409. ISSN 0026-2692

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Abstract

Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material.

Item Type: Article
Uncontrolled Keywords: Photoluminescence; GaInNAs/GaAs QWs; Modulation doping
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 05 Mar 2012 17:07
Last Modified: 05 Mar 2012 17:07
URI: http://repository.essex.ac.uk/id/eprint/2235

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