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The anatomy of the Gunn laser

Chung, S and Balkan, Naci (2008) 'The anatomy of the Gunn laser.' Journal of Applied Physics, 104 (7). ISSN 0021-8979

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Abstract

A monopolar GaAs Fabry–Pérot cavity laser based on the Gunn effect is studied both experimentally and theoretically. The light emission occurs via the band-to-band recombination of impact-ionized excess carriers in the propagating space-charge (Gunn) domains. Electroluminescence spectrum from the cleaved end-facet emission of devices with Ga1−xAlxAs (x = 0.32) waveguides shows clearly a preferential mode at a wavelength around 840 nm at T = 95 K. The threshold laser gain is assessed by using an impact ionization coefficient resulting from excess carriers inside the high-field domain.

Item Type: Article
Additional Information: Article number 073101
Uncontrolled Keywords: aluminium compounds; electroluminescence; Fabry-Perot resonators; gallium arsenide; Gunn devices; III-V semiconductors; impact ionisation; ion recombination; laser beams; laser cavity resonators; optical waveguides; semiconductor lasers; space charge
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 06 Mar 2012 12:13
Last Modified: 06 Aug 2013 12:56
URI: http://repository.essex.ac.uk/id/eprint/2236

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