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A comparative study of electrical and optical properties of InN and In0.48Ga0.52N

Gunes, Mustafa and Balkan, Naci and Zanato, D and Schaff, W J (2009) 'A comparative study of electrical and optical properties of InN and In0.48Ga0.52N.' Microelectronics Journal, 40 (4-5). pp. 872-874. ISSN 0026-2692

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Abstract

We present results of our studies concerning electrical and optical properties of In0.48Ga0.52N and InN. Hall measurement were carried out at temperatures between T=77 and 300 K. Photoluminescence (PL) spectrum in InN and In0.48Ga0.52N. InN has a single peak at 0.77 eV at 300 K. However, the PL in In0.48Ga0.52N has two peaks; a prominent peak at 1.16 eV and a smaller peak at 1.55 eV. These two peaks are attributed to Indium segregation corresponding to a high Indium concentration of 48% and a low concentration of 36%. High electric field measurements indicate that drift velocity that tends to saturate at around Vd=1.0×107 cm/s at 77 K in InN at an electric field of F=12 kV/cm. However, in In0.48Ga0.52N the I–V curve is almost linear up to an electric field of F=45 kV/cm, where the drift velocity is Vd=1.39×106 cm/s. At applied electric fields above this value a S-type negative differential resistance (NDR) is observed leading to an instability in the current and to the irreversible destruction of the sample.

Item Type: Article
Uncontrolled Keywords: InN; In rich GaInN; High field transport in InN
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 06 Mar 2012 12:11
Last Modified: 06 Mar 2012 12:11
URI: http://repository.essex.ac.uk/id/eprint/2238

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