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Superconductivity in heavily compensated Mg-doped InN

Tiras, E and Gunes, M and Balkan, N and Airey, R and Schaff, WJ (2009) 'Superconductivity in heavily compensated Mg-doped InN.' Applied Physics Letters, 94 (14). p. 142108. ISSN 0003-6951

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We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs Tc = 3.97 K as determined by magnetoresistance and Hall resistance measurements. The two-dimensional (2D) carrier density of the measured sample is n2D = 9×1014 cm−2 corresponding to a three-dimensional (3D) electron density of n3D = 1.8×1019 cm−3 which is within the range of values between Mott transition and the superconductivity to metal transition. We propose a plausible mechanism to explain the existence of the superconductivity in terms of a uniform distribution of superconducting InN nanoparticles or nanosized indium dots forming microscopic Josephson junctions in the heavily compensated insulating bulk InN matrix.

Item Type: Article
Additional Information: Article number 142108
Uncontrolled Keywords: electron density; Hall effect; indium compounds; Josephson effect; magnesium; magnetoresistance; metal-insulator transition; nanoparticles; superconducting materials; superconducting transition temperature
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
SWORD Depositor: Elements
Depositing User: Elements
Date Deposited: 06 Mar 2012 12:04
Last Modified: 06 Jan 2022 14:35

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