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Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Sun, Y and Balkan, Naci and Erol, A and Arikan, M C (2009) 'Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells.' Microelectronics Journal, 40 (3). pp. 403-405. ISSN 0026-2692

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Abstract

We present electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures. The Hall mobility of electrons in the n-type material decreases dramatically with increasing nitrogen composition. The mobility of 2D holes in p-modulation-doped quantum wells is significantly higher than that of 2D electrons in n-modulation-doped material with similar nitrogen concentration. The mobility of 2D electrons is discussed using a S-matrix model for N-related alloy scattering. The results indicate that the electron mobility is intrinsically limited by scattering from nitrogen complexes. The high mobility of 2D holes is explained in terms of negligible effect of nitrogen on valance band and the absence of scattering with localized nitrogen complexes.

Item Type: Article
Uncontrolled Keywords: GaInNAs; Two-dimension electron gas; Mobility
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 06 Mar 2012 12:06
Last Modified: 06 Mar 2012 12:06
URI: http://repository.essex.ac.uk/id/eprint/2241

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