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Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

Lisesivdin, S B and Balkan, Naci and Makarovsky, O and Patanè, A and Yildiz, A and Caliskan, M D and Kasap, M and Ozcelik, S and Ozbay, E (2009) 'Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures.' Journal of Applied Physics, 105 (9). 093701. ISSN 0021-8979

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Abstract

This work describes Shubnikov–de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures.

Item Type: Article
Uncontrolled Keywords: aluminium compounds; electron density; gallium compounds; III-V semiconductors; semiconductor heterojunctions; Shubnikov-de Haas effect; spin-orbit interactions; two-dimensional electron gas; wide band gap semiconductors
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 06 Mar 2012 11:44
Last Modified: 06 Mar 2012 11:44
URI: http://repository.essex.ac.uk/id/eprint/2242

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