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Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Sun, Y and Balkan, N (2009) 'Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells.' Journal of Applied Physics, 106 (7). 073704-073704. ISSN 0021-8979

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We present the studies of energy and momentum relaxation dynamics of nonequilibrium holes in GaxIn1−xNyAs1−y/GaAs quantum well modulation doped with Be. Experimental results show that the real-space transfer (RST) of hot holes occurs via thermionic emission from the high-mobility GaInNAs quantum wells into the low-mobility GaAs barriers at a threshold electric field of F ∼ 6 kV/cm at T = 13 K. At this field the hole drift velocity saturates at vd ∼ 1×107 cm/s. A slight increase in the field above the threshold leads to the impact ionization of acceptors in the barriers by the nonequilibrium holes. We observe and model theoretically a negative differential mobility effect induced by RST that occurs at an electric field of F ∼ 7 kV/cm. The observed current surge at electric fields above 7 kV/cm is attributed to the hole multiplication induced by shallow impurity breakdown in the GaAs barrier and impact ionization in the high-field domain regime associated with the packet of RST of holes in the well.

Item Type: Article
Additional Information: Article number - 073704
Uncontrolled Keywords: gallium arsenide; gallium compounds; hole mobility; hot carriers; III-V semiconductors; indium compounds; semiconductor doping; semiconductor quantum wells; thermionic emission; wide band gap semiconductors
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
SWORD Depositor: Elements
Depositing User: Elements
Date Deposited: 06 Mar 2012 11:55
Last Modified: 06 Jan 2022 14:35

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