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In rich In1−xGaxN: Composition dependence of longitudinal optical phonon energy

Tiras, Engin and Gunes, Mustafa and Balkan, Naci and Schaff, W J (2010) 'In rich In1−xGaxN: Composition dependence of longitudinal optical phonon energy.' physica status solidi (b), 247 (1). pp. 189-193. ISSN 0370-1972

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The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1−xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In1−xGaxN with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well.

Item Type: Article
Uncontrolled Keywords: 72.20.–i; 78.30.Fs; 78.66.Fd
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 05 Mar 2012 16:55
Last Modified: 05 Mar 2012 16:55

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