Gunes, M and Balkan, N and Tiras, E and Ardali, S and Ajagunna, AO and Iliopoulos, E and Georgakilas, A (2011) 'Superconductivity in MBE grown InN.' physica status solidi (c), 8 (5). pp. 1637-1640. ISSN 1862-6351

Full text not available from this repository.

Abstract

We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82 K, for an 1080 nm InN layer with carrier concentration n3D=1.185x1019 cm-3. However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x1019 cm-3, 1.38x1019 cm-3, and thicknesses of 2070 and 4700 nm, respectively. The carrier density of all investigated samples was within the range of values between the Mott transition (2x1017 cm-3) and the superconductivity to metal transition (7x1020 cm-3). We believe that at lower temperatures (3He) which we cannot achieve with our set-up, the phase transition in other samples is likely to be observed. The origin of the observed anisotropic type-II superconductivity is discussed

Item Type:	Article
Uncontrolled Keywords:	InN; superconductivity; Mott transition; critical magnetic field
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science and Health > Computer Science and Electronic Engineering, School of
SWORD Depositor:	Elements
Depositing User:	Elements
Date Deposited:	05 Mar 2012 16:59
Last Modified:	06 Jan 2022 14:35
URI:	http://repository.essex.ac.uk/id/eprint/2247

Actions (login required)

View Item