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Hot carrier relaxation process in InGaN epilayers

Lagarde, D and Carrère, H and Chassaing, P-M and Balocchi, A and Marie, X and Balkan, N and Schaff, WJ (2011) 'Hot carrier relaxation process in InGaN epilayers.' physica status solidi (b), 248 (5). pp. 1180-1182. ISSN 0370-1972

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InGaN epilayers with gallium fractions ranging between 0 and 0.48 have been studied by time-resolved photoluminescence. Layers containing low gallium fractions are associated with low PL emission intensity. For In0.83Ga0.17N layer, the luminescence decay is 100 times faster in the high energy part of the photoluminescence spectrum than on the low energy part, reflecting the hot carrier recombination process. This is confirmed by the significant blue shift of the photoluminescence spectra for short decay times compared to the time integrated spectrum. It takes about 10 ps for the carriers to reach an equilibrium temperature of 100 K.

Item Type: Article
Uncontrolled Keywords: InGaN; hot carrier relaxation; time-resolved photoluminescence
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
SWORD Depositor: Elements
Depositing User: Elements
Date Deposited: 05 Mar 2012 16:42
Last Modified: 06 Jan 2022 14:35

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