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Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells

Tiras, Engin and Balkan, Naci and Ardali, Sukru and Gunes, Mustafa and Fontaine, C and Arnoult, A (2011) 'Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells.' Philosophical Magazine, 91 (4). pp. 628-639. ISSN 1478-6435

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Abstract

Electronic transport in n- and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32 K and at magnetic fields up to B = 11 T. The momentum relaxation and the quantum lifetimes (τq ) of electrons and holes are obtained directly from the temperature and magnetic field dependencies of the SdH oscillation amplitudes, respectively. A detailed analysis of quantum and transport life times indicates that the momentum relaxation of holes is forward displaced in k-space, while a large angle-scattering mechanism is prominent for the electrons. This discrepancy is believed to be due to scattering of electrons with nitrogen complexes and to the lack of such a mechanism for holes.

Item Type: Article
Uncontrolled Keywords: GaInNAs; effective mass; quantum lifetime
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 05 Mar 2012 16:45
Last Modified: 05 Mar 2012 16:45
URI: http://repository.essex.ac.uk/id/eprint/2252

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