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Influence of field plate on the transient operation of the AlGaN/GaN HEMT

Brannick, A and Zakhleniuk, NA and Ridley, BK and Shealy, JR and Schaff, WJ and Eastman, LF (2009) 'Influence of field plate on the transient operation of the AlGaN/GaN HEMT.' IEEE Electron Device Letters, 30 (5). 436 - 438. ISSN 0741-3106

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Abstract

In this letter, a link between the AlGaN/GaN high-electron-mobility-transistor (HEMT) field plate (FP) and the rate of reoccupation of surface traps is presented. Surface traps are considered to be among the primary factors behind HEMT performance deterioration at high frequencies. Results from simulations using the commercial software package DESSIS are presented, in which the FP is found to reduce trap reoccupation by limiting the tunneling injection of electrons into surface traps in the gate-drain region and thus considerably improve the transient operation of the device. © 2009 IEEE.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 05 Mar 2013 12:00
Last Modified: 30 Jan 2019 16:16
URI: http://repository.essex.ac.uk/id/eprint/5571

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