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Effects of spin relaxation rate of InGaAs/InP of quantum wells on elliptically polarised injection locked vcsels

Homayounfar, A and Adams, MJ (2008) Effects of spin relaxation rate of InGaAs/InP of quantum wells on elliptically polarised injection locked vcsels. In: UNSPECIFIED, ? - ?.

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Abstract

Using spin relaxation rate in the range of InGaAs/InP VCSELs subject to polarized injection, it is found that increasing the birefringence and pumping terms, can increase elliptically polarised injection locking stability for slave VCSELs. © 2000 IEEE.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Published proceedings: Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Clare Chatfield
Date Deposited: 13 Aug 2014 09:43
Last Modified: 05 Feb 2019 17:15
URI: http://repository.essex.ac.uk/id/eprint/8929

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