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Determination of dislocation densities in InN

Ardali, Sukru and Tiras, Engin and Gunes, Mustafa and Balkan, Naci and Ajagunna, Adebowale Olufunso and Iliopoulos, Eleftherios and Georgakilas, Alexandros (2012) 'Determination of dislocation densities in InN.' physica status solidi (c), 9 (3-4). pp. 997-1000. ISSN 1862-6351

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Abstract

The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann transport equation. It is found that dislocation scattering is the dominant scattering mechanisms at low temperatures because of the large lattice mismatch with the substrate and hence the high density of dislocations in these material systems. Nevertheless, InN epilayers are characterized by a high background carrier density, probably associated with unwanted impurities. Therefore, we also included in our calculations the ionized impurity scattering. However, the effect of ionized impurity scattering as well as the acoustic phonon scattering, remote- background-ionized impurity scattering, and interface roughness scattering on electron mobility are much smaller than that of dislocation scattering. The dislocation densities, in samples with InN thicknesses of 0.4, 0.6 and 0.8 µm, are then determined from the best fit to the experimental data for the low-temperature transport mobility.

Item Type: Article
Uncontrolled Keywords: indium nitrides, mobility, Hall carrier, dislocation density
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Clare Chatfield
Date Deposited: 11 Jan 2015 16:22
Last Modified: 11 Jan 2015 16:22
URI: http://repository.essex.ac.uk/id/eprint/9053

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