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Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method

Momox, E and Zakhleniuk, N and Balkan, N (2012) 'Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method.' Journal of Computational Physics, 231 (18). 6173 - 6180. ISSN 0021-9991

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Abstract

Due to the enormous progress in computer technology and numerical methods that has been achieved over the past several decades, the use of numerical simulation methods in all scientific disciplines gain more and more importance. In the physics field, these methods have provided remarkable numerical solutions to problems considered analytically intractable. The solution of the Schrödinger equation in semiconductor heterostructures is a good example. However, many of these numerical schemes are cumbersome to implement for nonexperts in numerical computing. With this reason as motivation, a novel method simple enough to implement yet powerful enough to solve Schrödinger equation in semiconductor devices with high accuracy is presented herein. © 2012 Elsevier Inc..

Item Type: Article
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Clare Chatfield
Date Deposited: 09 Jan 2015 21:40
Last Modified: 30 Jan 2019 16:21
URI: http://repository.essex.ac.uk/id/eprint/9055

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