Research Repository

Gain studies of 1.3-mum dilute nitride HELLISH-VCSOA for optical communications

Adel Ismael Chaqmaqchee, Faten and Balkan, Naci (2012) 'Gain studies of 1.3-mum dilute nitride HELLISH-VCSOA for optical communications.' Nanoscale Research Letters, 7 (1). pp. 526-529. ISSN 1556-276X

[img]
Preview
Text
Gain Studies of 1.3-mu m dilute nitride HELLISH-VCSOA for optical communications.pdf - Published Version
Available under License Creative Commons Attribution.

Download (841kB) | Preview

Abstract

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device.

Item Type: Article
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Clare Chatfield
Date Deposited: 09 Jan 2015 21:36
Last Modified: 09 Jan 2015 21:36
URI: http://repository.essex.ac.uk/id/eprint/9058

Actions (login required)

View Item View Item