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Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

Khalil, Hagir M and Royall, Ben and Mazzucato, Simone and Balkan, Naci (2012) 'Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.' Nanoscale Research Letters, 7 (1). p. 539. ISSN 1556-276X

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Abstract

The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out.

Item Type: Article
Uncontrolled Keywords: p-i-n diodes, GaInNAs/GaAs, Multiple quantum well, Dilute nitrides
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Clare Chatfield
Date Deposited: 09 Jan 2015 21:37
Last Modified: 09 Jan 2015 21:37
URI: http://repository.essex.ac.uk/id/eprint/9059

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