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Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity

Balkan, Naci and Tiras, Engin and Erol, Ayse and Gunes, Mustafa and Ardali, Sukru and Arikan, MCetin and Lagarde, Dalphine and Carrère, Helene and Marie, Xavier and Gumus, Cebrail (2012) 'Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity.' Nanoscale Research Letters, 7 (1). p. 574. ISSN 1556-276X

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We report on the Mg-doped, indium-rich GaxIn1-xN (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 < T < 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two prominent low-energy peaks at 0.65 and 1.0 eV and one broad high-energy peak at around 1.35 eV. The temperature dependence of the spectral photoconductivity under constant illumination intensity, at T > 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 +/- 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A0 binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 +/- 20 meV.

Item Type: Article
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Clare Chatfield
Date Deposited: 09 Jan 2015 21:35
Last Modified: 09 Jan 2015 21:35

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