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Dilute nitride and GaAs n-i-p-i solar cells

Mazzucato, Simone and Royall, Benjamin and Ketlhwaafetse, Richard and Balkan, Naci and Salmi, Joel and Puustinen, Janne and Guina, Mircea and Smith, Andy and Gwilliam, Russell (2012) 'Dilute nitride and GaAs n-i-p-i solar cells.' Nanoscale Research Letters, 7 (1). p. 631. ISSN 1556-276X

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Abstract

We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal annealing treatment and fabrication into circular mesa cells. As means of characterisation, spectral response and illuminated current–voltage (I-V) were measured on the samples. The spectral response suggests that all horizontal layers are able to contribute to the photocurrent. Performance of the devices is discussed with interest in the n-i-p-i structure as a possible design for the GaInP/GaAs/GaInNAs tandem solar cell.

Item Type: Article
Uncontrolled Keywords: Dilute nitride, n-i-p-i solar cell, Ion implantation
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Clare Chatfield
Date Deposited: 12 Jan 2015 10:31
Last Modified: 12 Jan 2015 10:31
URI: http://repository.essex.ac.uk/id/eprint/9061

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