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Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Khalil, Hagir M and Balkan, Naci (2014) 'Carrier trapping and escape times in p-i-n GaInNAs MQW structures.' Nanoscale Research Letters, 9 (1). p. 21. ISSN 1556-276X

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Abstract

We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.

Item Type: Article
Uncontrolled Keywords: GaInNAs/GaAs capture rates resonant tunnelling p-i-n multiple quantum wells
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 03 Apr 2014 09:36
Last Modified: 26 Aug 2014 11:54
URI: http://repository.essex.ac.uk/id/eprint/9166

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