Items where Author is "Balkan, N"

Balkan, N and Erol, A and Sarcan, F and Al-Ghuraibawi, LFF and Bin Nordin, MS (2015) Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ ∼ 1.3μm optical communications window. Superlattices and Microstructures, 86. pp. 467-471. DOI https://doi.org/10.1016/j.spmi.2015.07.032

Royall, B and Mazzucato, S and Ketlhwaafetse, RM and Balkan, N and Puustinen, J and Guina, M and Smith, AJ (2013) GaAs n‐i‐p‐i solar cells with ion implanted selective contacts. physica status solidi c, 10 (4). pp. 581-584. DOI https://doi.org/10.1002/pssc.201200481

Chaqmaqche, FAI and Mazzucato, S and Balkan, N and Hugues, M and Hopkinson, M (2013) Gain characteristic of dilute nitride HELLISH‐VCSOA for 1.3 µm wavelength operation. physica status solidi c, 10 (4). pp. 564-566. DOI https://doi.org/10.1002/pssc.201200195

Mazzucato, S and Adams, MJ and Balkan, N (2012) 1.55 μm distributed feedback (DFB) lasers subject to strong 1.4 μm optical injection. Optics Communications, 285 (24). pp. 5313-5318. DOI https://doi.org/10.1016/j.optcom.2012.07.059

Momox, E and Zakhleniuk, N and Balkan, N (2012) Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method. Journal of Computational Physics, 231 (18). pp. 6173-6180. DOI https://doi.org/10.1016/j.jcp.2012.05.017

Mazzucato, S and Schires, K and Hurtado, A and Adams, MJ and Henning, ID and Balkan, N (2012) 1.3 to 1.55 $\mu\hbox{m}$ All-Optical Wavelength Conversion for VCSEL-to-VCSEL Inversion and Logic. IEEE Photonics Journal, 4 (3). pp. 817-824. DOI https://doi.org/10.1109/jphot.2012.2198803

Tiras, E and Tanisli, M and Balkan, N and Ardali, S and Iliopoulos, E and Georgakilas, A (2012) Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra. physica status solidi (b), 249 (6). pp. 1235-1240. DOI https://doi.org/10.1002/pssb.201147500

Chaqmaqchee, FAI and Mazzucato, S and Sun, Y and Balkan, N and Tiras, E and Hugues, M and Hopkinson, M (2012) Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3μm operation. Materials Science and Engineering: B, 177 (10). pp. 739-743. DOI https://doi.org/10.1016/j.mseb.2011.12.035

Khalil, HM and Mazzucato, S and Ardali, S and Celik, O and Mutlu, S and Royall, B and Tiras, E and Balkan, N and Puustinen, J and Korpijärvi, V-M and Guina, M (2012) Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures. Materials Science and Engineering: B, 177 (10). pp. 729-733. DOI https://doi.org/10.1016/j.mseb.2011.12.022

Donmez, O and Gunes, M and Erol, A and Arikan, MC and Balkan, N (2011) High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN. Journal of Applied Physics, 110 (10). p. 103506. DOI https://doi.org/10.1063/1.3660692

Royall, B and Balkan, N and Mazzucato, S and Khalil, H and Hugues, M and Roberts, JS (2011) Comparative study of GaAs and GaInNAs/GaAs multi‐quantum well solar cells. physica status solidi (b), 248 (5). pp. 1191-1194. DOI https://doi.org/10.1002/pssb.201000774

Lagarde, D and Carrère, H and Chassaing, P‐M and Balocchi, A and Marie, X and Balkan, N and Schaff, WJ (2011) Hot carrier relaxation process in InGaN epilayers. physica status solidi (b), 248 (5). pp. 1180-1182. DOI https://doi.org/10.1002/pssb.201000790

Royall, B and Balkan, N (2011) Modelling of multijunction solar cells with dilute nitride n–i–p–i junctions. physica status solidi (b), 248 (5). pp. 1203-1206. DOI https://doi.org/10.1002/pssb.201000787

Gunes, M and Balkan, N and Tiras, E and Ardali, S and Ajagunna, AO and Iliopoulos, E and Georgakilas, A (2011) Superconductivity in MBE grown InN. physica status solidi c, 8 (5). pp. 1637-1640. DOI https://doi.org/10.1002/pssc.201000794

Tiras, E and Balkan, N and Ardali, S and Gunes, M and Fontaine, C and Arnoult, A (2011) Quantum lifetimes and momentum relaxation of electrons and holes in Ga_0.7In_0.3N_0.015As_0.985/GaAs quantum wells. Philosophical Magazine, 91 (4). pp. 628-639. DOI https://doi.org/10.1080/14786435.2010.525543

de Valicourt, G and Guina, M and Balkan, N and Porzi, C (2010) Dilute nitride vertical-cavity gate for all-optical logic at 1.3 µm. IET Optoelectronics, 4 (5). pp. 201-209. DOI https://doi.org/10.1049/iet-opt.2009.0078

Lisesivdin, SB and Yildiz, A and Balkan, N and Kasap, M and Ozcelik, S and Ozbay, E (2010) Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method. Journal of Applied Physics, 108 (1). 013712-013712. DOI https://doi.org/10.1063/1.3456008

Tiras, E and Gunes, M and Balkan, N and Schaff, WJ (2010) In rich In_1−<i>x</i> Ga_<i>x</i> N: Composition dependence of longitudinal optical phonon energy. physica status solidi (b), 247 (1). pp. 189-193. DOI https://doi.org/10.1002/pssb.200945144

Gunes, M and Balkan, N and Yilmaz, M and Ulug, B and Ulug, A and Schaff, WJ and Vainos, Nikolaos and Couris, Stelios and Paspalakis, Emmanuel and Koutselas, Ioannis and Pissadakis, Stavros (2010) A Study of Optical and Electrical Properties of In-rich In[sub 1-x]Ga[sub x]N. In: INTERNATIONAL COMMISSION FOR OPTICS TOPICAL MEETING ON EMERGING TRENDS AND NOVEL MATERIALS IN PHOTONICS, ? - ?, Delphi, GReece.

Sun, Y and Balkan, N (2009) Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells. Journal of Applied Physics, 106 (7). 073704-073704. DOI https://doi.org/10.1063/1.3225997

Lisesivdin, SB and Balkan, N and Makarovsky, O and Patanè, A and Yildiz, A and Caliskan, MD and Kasap, M and Ozcelik, S and Ozbay, E (2009) Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures. Journal of Applied Physics, 105 (9). 093701-093701. DOI https://doi.org/10.1063/1.3120782

Sun, Y and Balkan, N and Aslan, M and Lisesivdin, SB and Carrere, H and Arikan, MC and Marie, X (2009) Electronic transport in n- and p-type modulation doped Ga_<i>x</i>In_1−<i>x</i>N_<i>y</i>As_1−<i>y</i><i>/</i>GaAs quantum wells. Journal of Physics: Condensed Matter, 21 (17). p. 174210. DOI https://doi.org/10.1088/0953-8984/21/17/174210

Tiras, E and Gunes, M and Balkan, N and Airey, R and Schaff, WJ (2009) Superconductivity in heavily compensated Mg-doped InN. Applied Physics Letters, 94 (14). p. 142108. DOI https://doi.org/10.1063/1.3116120

Gunes, M and Balkan, N and Zanato, D and Schaff, WJ (2009) A comparative study of electrical and optical properties of InN and In0.48Ga0.52N. Microelectronics Journal, 40 (4-5). pp. 872-874. DOI https://doi.org/10.1016/j.mejo.2008.11.020

Royall, B and Balkan, N (2009) Dilute nitride n-i-p-i solar cells. Microelectronics Journal, 40 (3). pp. 396-398. DOI https://doi.org/10.1016/j.mejo.2008.06.011

Sun, Y and Balkan, N and Erol, A and Arikan, MC (2009) Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells. Microelectronics Journal, 40 (3). pp. 403-405. DOI https://doi.org/10.1016/j.mejo.2008.06.010

Yılmaz, M and Sun, Y and Balkan, N and Ulug, B and Ulug, A and Sopanen, M and Reentilä, O and Mattila, M and Fontaine, C and Arnoult, A (2009) Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells. Microelectronics Journal, 40 (3). pp. 406-409. DOI https://doi.org/10.1016/j.mejo.2008.06.003

Lisesivdin, SB and Balkan, N and Ozbay, E (2009) A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. Microelectronics Journal, 40 (3). pp. 413-417. DOI https://doi.org/10.1016/j.mejo.2008.06.006

Chung, S and Balkan, N (2008) The anatomy of the Gunn laser. Journal of Applied Physics, 104 (7). 073101-073101. DOI https://doi.org/10.1063/1.2977719

Sun, Y and Erol, A and Yilmaz, M and Arikan, MC and Ulug, B and Ulug, A and Balkan, N and Sopanen, M and Reentilä, O and Mattila, M and Fontaine, C and Arnoult, A (2008) Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications. Optical and Quantum Electronics, 40 (7). pp. 467-474. DOI https://doi.org/10.1007/s11082-007-9163-8

Balkan, N and Chung, SH (2008) Applications of Gunn lasers. In: Photonics Europe, ? - ?.

Balkan, N and Erol, A and Potter, RJ and Mazzucato, S and Hepburn, CJ and Joyce, TB and Vickers, AJ and Chalker, PR and Boland-Thoms, A and Bullough, TJ (2004) Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In: UNSPECIFIED, ? - ?.

Vickers, AJ and Balkan, N and Cankurtaran, M and Celik, H (1996) Acoustic phonon assisted energy relaxation of 2D electron gases. In: UNSPECIFIED, ? - ?.

Balkan, N and Çelik, H and Vickers, AJ and Cankurtaran, M (1995) Warm-electron power loss in GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As multiple quantum wells: Well-width dependence. Physical Review B, 52 (24). pp. 17210-17222. DOI https://doi.org/10.1103/physrevb.52.17210

Straw, A and Cunha, A Da and Balkan, N and Vickers, AJ (1994) Electric field profiling in 2D semiconductors exhibiting electrical instabilities. In: UNSPECIFIED, ? - ?.

Dottling, R and Rudzick, O and Scholl, E and Straw, A and Vickers, AJ and Balkan, N and Cunha, A Da (1994) Self-generated nonlinear oscillations in multilayer semiconductor heterostructures. In: UNSPECIFIED, ? - ?.

Straw, A and Vickers, AJ and Balkan, N and Roberts, JS (1991) Acoustic and optic phonon energy relaxation in non-degenerate multiple quantum wells. Superlattices and Microstructures, 10 (2). pp. 203-206. DOI https://doi.org/10.1016/0749-6036(91)90231-f