Sarikavak-Lisesivdin, Beyza and Lisesivdin, Sefer Bora and Balkan, Naci and Atmaca, Gokhan and Narin, Polat and Cakmak, Huseyin and Ozbay, Ekmel (2015) Energy Relaxation of Electrons in InGaN Quantum Wells. Metallurgical and Materials Transactions A, 46 (4). pp. 1565-1569. DOI https://doi.org/10.1007/s11661-015-2762-2
Sarikavak-Lisesivdin, Beyza and Lisesivdin, Sefer Bora and Balkan, Naci and Atmaca, Gokhan and Narin, Polat and Cakmak, Huseyin and Ozbay, Ekmel (2015) Energy Relaxation of Electrons in InGaN Quantum Wells. Metallurgical and Materials Transactions A, 46 (4). pp. 1565-1569. DOI https://doi.org/10.1007/s11661-015-2762-2
Sarikavak-Lisesivdin, Beyza and Lisesivdin, Sefer Bora and Balkan, Naci and Atmaca, Gokhan and Narin, Polat and Cakmak, Huseyin and Ozbay, Ekmel (2015) Energy Relaxation of Electrons in InGaN Quantum Wells. Metallurgical and Materials Transactions A, 46 (4). pp. 1565-1569. DOI https://doi.org/10.1007/s11661-015-2762-2
Abstract
In this study, electron energy relaxation mechanisms in HEMT structures with different In x Ga1−x N-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < T e < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science |
| Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 09 Jul 2015 13:35 |
| Last Modified: | 06 Jan 2022 14:39 |
| URI: | http://repository.essex.ac.uk/id/eprint/14053 |