Electron power loss in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As/GaAs quantum wells at intermediate electron temperatures

The power loss from electrons via acoustic phonons at intermediate electron temperatures has been studied in GaAs/AlxGa1-xAs quantum-well systems. Numerical calculations based on derived integrals that contain no approximations for the momentum conservation are undertaken and compared with experimentally calculated values of power loss, involving the measurement of Shubnikov de Haas oscillations as a function of lattice temperature and applied electric field. The comparison of the experimental results and the numerical calculations are very good when a value of 7 eV is used for the deformation potential. This is at variance with other results that suggest that a higher value of the deformation potential is required, although there is no reason to expect a value higher than the accepted value for bulk GaAs (7 eV) especially as there is a general assumption that the acoustic phonons in GaAs/AlxGa1-xAs systems are bulklike. © 1992 The American Physical Society.