Straw, A and Vickers, AJ and Roberts, JS (1989) Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells. In: UNSPECIFIED, ? - ?.
Straw, A and Vickers, AJ and Roberts, JS (1989) Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells. In: UNSPECIFIED, ? - ?.
Straw, A and Vickers, AJ and Roberts, JS (1989) Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells. In: UNSPECIFIED, ? - ?.
Abstract
We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (Te - Tl), suggesting that the energy relaxation occurs through acoustic phonon scattering. At electron temperatures greater than 20K, the experimental results are modelled using a standard expression for polar optical phonons. This modelling yields 30meV and 31meV for the polar optical phonon energy in GaAs and InGaAs respectively. © 1989.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Additional Information: | Published proceedings: Solid State Electronics |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science and Health Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 12 Mar 2017 16:17 |
| Last Modified: | 04 Dec 2024 06:40 |
| URI: | http://repository.essex.ac.uk/id/eprint/19285 |