Dyson, Angela and Henning, Ian D and Adams, Michael J (2008) Comparison of Type I and Type II Heterojunction Unitravelling Carrier Photodiodes for Terahertz Generation. IEEE Journal of Selected Topics in Quantum Electronics, 14 (2). pp. 277-283. DOI https://doi.org/10.1109/jstqe.2007.910107
Dyson, Angela and Henning, Ian D and Adams, Michael J (2008) Comparison of Type I and Type II Heterojunction Unitravelling Carrier Photodiodes for Terahertz Generation. IEEE Journal of Selected Topics in Quantum Electronics, 14 (2). pp. 277-283. DOI https://doi.org/10.1109/jstqe.2007.910107
Dyson, Angela and Henning, Ian D and Adams, Michael J (2008) Comparison of Type I and Type II Heterojunction Unitravelling Carrier Photodiodes for Terahertz Generation. IEEE Journal of Selected Topics in Quantum Electronics, 14 (2). pp. 277-283. DOI https://doi.org/10.1109/jstqe.2007.910107
Abstract
To assess the potential for terahertz generation, we have numerically simulated unitravelling carrier photodiodes with type I InGaAs/InP and type II GaAsSb-InP heterojunctions. The simulations give good agreement with published experimental results detailing device operation and 3 dB bandwidth. The optimization of these structures as photomixers by reducing the layer thickness of the absorber and varying the doping of the absorber and collector layers shows excellent potential for terahertz generation. © 2006 IEEE.
| Item Type: | Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science and Health Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 05 Mar 2012 14:29 |
| Last Modified: | 04 Dec 2024 06:59 |
| URI: | http://repository.essex.ac.uk/id/eprint/2184 |