Dilute nitride n-i-p-i solar cells

We propose a novel GaInNAs n-i-p-i doping superlattice to over come the problems of short minority carrier life times and low-diffusion lengths which lower the efficiency in conventional GaInNAs solar cells. A prototype structure is studied using the commercial simulation package DESSIS and the calculations of photo-generation, current density were carried out when the device is illuminated by an optical beam of a single wavelength below the band gap cut off. The I–V characteristics were simulated when both the samples were illuminated and in darkness.