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Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

Sun, Y and Erol, A and Yilmaz, M and Arikan, MC and Ulug, B and Ulug, A and Balkan, N and Sopanen, M and Reentilä, O and Mattila, M and Fontaine, C and Arnoult, A (2008) Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications. Optical and Quantum Electronics, 40 (7). pp. 467-474. DOI https://doi.org/10.1007/s11082-007-9163-8



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Full text not available from this repository. http://dx.doi.org/10.1007/s11082-007-9163-8

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