Chung, S and Balkan, N (2008) The anatomy of the Gunn laser. Journal of Applied Physics, 104 (7). 073101-073101. DOI https://doi.org/10.1063/1.2977719
Chung, S and Balkan, N (2008) The anatomy of the Gunn laser. Journal of Applied Physics, 104 (7). 073101-073101. DOI https://doi.org/10.1063/1.2977719
Chung, S and Balkan, N (2008) The anatomy of the Gunn laser. Journal of Applied Physics, 104 (7). 073101-073101. DOI https://doi.org/10.1063/1.2977719
Abstract
<jats:p>A monopolar GaAs Fabry–Pérot cavity laser based on the Gunn effect is studied both experimentally and theoretically. The light emission occurs via the band-to-band recombination of impact-ionized excess carriers in the propagating space-charge (Gunn) domains. Electroluminescence spectrum from the cleaved end-facet emission of devices with Ga1−xAlxAs (x=0.32) waveguides shows clearly a preferential mode at a wavelength around 840 nm at T=95 K. The threshold laser gain is assessed by using an impact ionization coefficient resulting from excess carriers inside the high-field domain.</jats:p>
Item Type: | Article |
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Additional Information: | Article number 073101 |
Uncontrolled Keywords: | aluminium compounds; electroluminescence; Fabry-Perot resonators; gallium arsenide; Gunn devices; III-V semiconductors; impact ionisation; ion recombination; laser beams; laser cavity resonators; optical waveguides; semiconductor lasers; space charge |
Subjects: | Q Science > QC Physics |
Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
Depositing User: | Unnamed user with email elements@essex.ac.uk |
Date Deposited: | 06 Mar 2012 12:13 |
Last Modified: | 06 Jul 2023 10:11 |
URI: | http://repository.essex.ac.uk/id/eprint/2236 |
Available files
Filename: 10.1063_1.pdf