Lisesivdin, SB and Balkan, N and Ozbay, E (2009) A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. Microelectronics Journal, 40 (3). pp. 413-417. DOI https://doi.org/10.1016/j.mejo.2008.06.006
Lisesivdin, SB and Balkan, N and Ozbay, E (2009) A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. Microelectronics Journal, 40 (3). pp. 413-417. DOI https://doi.org/10.1016/j.mejo.2008.06.006
Lisesivdin, SB and Balkan, N and Ozbay, E (2009) A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. Microelectronics Journal, 40 (3). pp. 413-417. DOI https://doi.org/10.1016/j.mejo.2008.06.006
Abstract
We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; even the most recent methods encounter great difficulties. For the GaN-based HEMT structures which have lower mobilities and larger effective masses than that of GaAs-based counterparts, these difficulties become more prominent. In this study, we describe a simple method for magnetotransport analysis to extract conduction channels successfully for a special case that is commonly encountered: one bulk channel and one two-dimensional electron gas (2DEG) channel. Advantage of this method is mainly its simplicity. The analysis can be done with only two magnetic field-dependent measurements per temperature step. The method is applied to the magnetotransport results of an unintentionally doped AlGaN/AlN/GaN/AlN heterostructure over a temperature range of 29–350 K and in a magnetic field range of 0–1.5 T (μB<1). The results are then compared with those obtained using a commercial package for these calculations namely: quantitative mobility spectrum analysis (QMSA).
Item Type: | Article |
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Uncontrolled Keywords: | Parallel conduction; Mixed conduction; Multi-carrier; MODFET; HEMT; QMSA |
Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
Depositing User: | Unnamed user with email elements@essex.ac.uk |
Date Deposited: | 06 Mar 2012 12:08 |
Last Modified: | 05 Dec 2024 11:22 |
URI: | http://repository.essex.ac.uk/id/eprint/2239 |