Tiras, E and Gunes, M and Balkan, N and Schaff, WJ (2010) In rich In<sub>1−<i>x</i> </sub> Ga<sub> <i>x</i> </sub> N: Composition dependence of longitudinal optical phonon energy. physica status solidi (b), 247 (1). pp. 189-193. DOI https://doi.org/10.1002/pssb.200945144
Tiras, E and Gunes, M and Balkan, N and Schaff, WJ (2010) In rich In<sub>1−<i>x</i> </sub> Ga<sub> <i>x</i> </sub> N: Composition dependence of longitudinal optical phonon energy. physica status solidi (b), 247 (1). pp. 189-193. DOI https://doi.org/10.1002/pssb.200945144
Tiras, E and Gunes, M and Balkan, N and Schaff, WJ (2010) In rich In<sub>1−<i>x</i> </sub> Ga<sub> <i>x</i> </sub> N: Composition dependence of longitudinal optical phonon energy. physica status solidi (b), 247 (1). pp. 189-193. DOI https://doi.org/10.1002/pssb.200945144
Abstract
The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1−xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In1−xGaxN with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 72.20.–i; 78.30.Fs; 78.66.Fd |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 05 Mar 2012 16:55 |
| Last Modified: | 05 Dec 2024 11:22 |
| URI: | http://repository.essex.ac.uk/id/eprint/2244 |