Gunes, M and Balkan, N and Tiras, E and Ardali, S and Ajagunna, AO and Iliopoulos, E and Georgakilas, A (2011) Superconductivity in MBE grown InN. physica status solidi c, 8 (5). pp. 1637-1640. DOI https://doi.org/10.1002/pssc.201000794
Gunes, M and Balkan, N and Tiras, E and Ardali, S and Ajagunna, AO and Iliopoulos, E and Georgakilas, A (2011) Superconductivity in MBE grown InN. physica status solidi c, 8 (5). pp. 1637-1640. DOI https://doi.org/10.1002/pssc.201000794
Gunes, M and Balkan, N and Tiras, E and Ardali, S and Ajagunna, AO and Iliopoulos, E and Georgakilas, A (2011) Superconductivity in MBE grown InN. physica status solidi c, 8 (5). pp. 1637-1640. DOI https://doi.org/10.1002/pssc.201000794
Abstract
<jats:title>Abstract</jats:title><jats:p>We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82 K, for an 1080 nm InN layer with carrier concentration n<jats:sub>3D</jats:sub>=1.185x10<jats:sup>19</jats:sup> cm<jats:sup>‐3</jats:sup>. However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10<jats:sup>19</jats:sup> cm<jats:sup>‐3</jats:sup>, 1.38x10<jats:sup>19</jats:sup> cm<jats:sup>‐3</jats:sup>, and thicknesses of 2070 and 4700 nm, respectively.</jats:p><jats:p>The carrier density of all investigated samples was within the range of values between the Mott transition (2x10<jats:sup>17</jats:sup> cm<jats:sup>‐3</jats:sup>) and the superconductivity to metal transition (7x10<jats:sup>20</jats:sup> cm<jats:sup>‐3</jats:sup>). We believe that at lower temperatures (<jats:sup>3</jats:sup>He) which we cannot achieve with our set‐up, the phase transition in other samples is likely to be observed. The origin of the observed anisotropic type‐<jats:italic>II</jats:italic> superconductivity is discussed (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | InN; superconductivity; Mott transition; critical magnetic field |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 05 Mar 2012 16:59 |
| Last Modified: | 05 Dec 2024 11:22 |
| URI: | http://repository.essex.ac.uk/id/eprint/2247 |