Research Repository

A Fast Simulation Method for Analysis of SEE in VLSI

Lu, Yufan and Chen, Xin and Zhai, Xiaojun and Saha, Sangeet and Ehsan, Shoaib and Su, Jinya and McDonald-Maier, Klaus (2021) 'A Fast Simulation Method for Analysis of SEE in VLSI.' Microelectronics Reliability, 120. ISSN 0026-2714 (In Press)

[img]
Preview
Text
1-s2.0-S0026271421000767-main.pdf - Published Version
Available under License Creative Commons Attribution.

Download (3MB) | Preview

Abstract

The transistor simulation tools (e.g. TCAD and SPICE) are widely used to simulate single event effects (SEE) in industry. However, due to the variances of the physical parameters in practical design, e.g. the nature of the particle, linear energy transfer and circuit characteristics would have a large impacts on the final simulation accuracy, which will significantly increase the complexity and cost in the workflow of the transistor level simulation for large scale circuits. Therefore, a new SEE simulation scheme is proposed to offer a fast and cost-efficient method to evaluate and compare the performance of large scale circuits in the effects of radiation particles. In this work, we have combined both the advantages of transistor and hardware description language (HDL) simulations, and proposed accurate SEE digital error models for high-speed error analysis in the large scale circuits. The experimental results show that the proposed scheme is able to handle SEE simulations for more than 40 different circuits with the sizes varied from 100 transistors to 100 k transistors.

Item Type: Article
Uncontrolled Keywords: Single event effect, Fault injection, SEE models, SEE mitigation, HDL simulation, VLSI
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Elements
Date Deposited: 12 Apr 2021 13:10
Last Modified: 12 Apr 2021 13:10
URI: http://repository.essex.ac.uk/id/eprint/30086

Actions (login required)

View Item View Item