Mazzucato, Simone and Royall, Benjamin and Ketlhwaafetse, Richard and Balkan, Naci and Salmi, Joel and Puustinen, Janne and Guina, Mircea and Smith, Andy and Gwilliam, Russell (2012) Dilute nitride and GaAs n-i-p-i solar cells. Nanoscale Research Letters, 7 (1). 631-. DOI https://doi.org/10.1186/1556-276x-7-631
Mazzucato, Simone and Royall, Benjamin and Ketlhwaafetse, Richard and Balkan, Naci and Salmi, Joel and Puustinen, Janne and Guina, Mircea and Smith, Andy and Gwilliam, Russell (2012) Dilute nitride and GaAs n-i-p-i solar cells. Nanoscale Research Letters, 7 (1). 631-. DOI https://doi.org/10.1186/1556-276x-7-631
Mazzucato, Simone and Royall, Benjamin and Ketlhwaafetse, Richard and Balkan, Naci and Salmi, Joel and Puustinen, Janne and Guina, Mircea and Smith, Andy and Gwilliam, Russell (2012) Dilute nitride and GaAs n-i-p-i solar cells. Nanoscale Research Letters, 7 (1). 631-. DOI https://doi.org/10.1186/1556-276x-7-631
Abstract
<jats:title>Abstract</jats:title> <jats:p>We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal annealing treatment and fabrication into circular mesa cells. As means of characterisation, spectral response and illuminated current–voltage (<jats:italic>I</jats:italic>-<jats:italic>V</jats:italic>) were measured on the samples. The spectral response suggests that all horizontal layers are able to contribute to the photocurrent. Performance of the devices is discussed with interest in the n-i-p-i structure as a possible design for the GaInP/GaAs/GaInNAs tandem solar cell.</jats:p>
Item Type: | Article |
---|---|
Uncontrolled Keywords: | Dilute nitride, n-i-p-i solar cell, Ion implantation |
Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science |
Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
Depositing User: | Unnamed user with email elements@essex.ac.uk |
Date Deposited: | 12 Jan 2015 10:31 |
Last Modified: | 05 Dec 2024 12:07 |
URI: | http://repository.essex.ac.uk/id/eprint/9061 |
Available files
Filename: Dilute Nitride and GaAs n-i-p-i solar cells.pdf
Licence: Creative Commons: Attribution 3.0